3N187
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
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The 3N187 from Harris Corporation represents the next generation of JFET technology in Discrete Semiconductor Products. This N-channel/P-channel JFET delivers exceptional IDSS matching and transconductance linearity for precision analog designs. Key advantages include ultra-low 1/f noise, wide dynamic range, and stable operation from -55 C to +150 C. The 3N187 is widely adopted in scientific instrumentation, including particle detectors, mass spectrometers, and telescope sensor arrays. Commercial applications span from boutique guitar effects pedals to industrial process control systems. Engineers trust this JFET for its repeatable parameters batch-to-batch and exceptional longevity in continuous operation scenarios.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 6.5 V
- Drain to Source Voltage (Vdss): 20 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 50 µA
- Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 330 mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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