3SK293(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
FET RF 12.5V 800MHZ USQ
$0.48
Available to order
Reference Price (USD)
3,000+
$0.12540
6,000+
$0.11780
15,000+
$0.11020
30,000+
$0.10640
Exquisite packaging
Discount
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The 3SK293(TE85L,F) RF MOSFET transistor by Toshiba Semiconductor and Storage is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The 3SK293(TE85L,F) stands out for its ability to handle high power levels while maintaining signal integrity. When you choose Toshiba Semiconductor and Storage's 3SK293(TE85L,F), you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Active
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: 22dB
- Voltage - Test: 6 V
- Current Rating (Amps): 30mA
- Noise Figure: 2.5dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 12.5 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
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