70T633S10BFI8
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 208CABGA
$304.06
Available to order
Reference Price (USD)
1,000+
$145.44180
Exquisite packaging
Discount
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Enhance your projects with the 70T633S10BFI8 Memory IC from Renesas Electronics America Inc, a top-tier component in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the needs of sophisticated electronic systems. Its innovative design ensures optimal performance and energy efficiency.
The 70T633S10BFI8 exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The 70T633S10BFI8 provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The 70T633S10BFI8 is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LFBGA
- Supplier Device Package: 208-CABGA (15x15)
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