70V659S12DRI
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 208PQFP
$286.67
Available to order
Reference Price (USD)
1+
$286.67000
500+
$283.8033
1000+
$280.9366
1500+
$278.0699
2000+
$275.2032
2500+
$272.3365
Exquisite packaging
Discount
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Discover the 70V659S12DRI Memory IC by Renesas Electronics America Inc, a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The 70V659S12DRI is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the 70V659S12DRI, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The 70V659S12DRI stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the 70V659S12DRI span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The 70V659S12DRI is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3.15V ~ 3.45V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
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