71016S20YG
Renesas Electronics America Inc

Renesas Electronics America Inc
IC SRAM 1MBIT PARALLEL 44SOJ
$2.65
Available to order
Reference Price (USD)
1+
$2.54000
16+
$2.28813
32+
$2.25188
64+
$2.24594
112+
$2.00688
256+
$1.94164
512+
$1.93441
1,008+
$1.80159
5,008+
$1.63013
Exquisite packaging
Discount
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Discover the 71016S20YG Memory IC by Renesas Electronics America Inc, a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The 71016S20YG is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the 71016S20YG, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The 71016S20YG stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the 71016S20YG span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The 71016S20YG is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ