71V416S12BE8
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 48CABGA
$7.08
Available to order
Reference Price (USD)
2,000+
$4.74863
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 71V416S12BE8 Memory IC by Renesas Electronics America Inc is a high-performance component designed for the Memory category. This IC provides exceptional data storage and retrieval speeds, making it ideal for demanding electronic systems. Its durable design ensures reliable operation in various environments.
Memory ICs, including the 71V416S12BE8, are known for their ability to manage large datasets efficiently. These components are vital for systems that require quick and accurate memory access. The 71V416S12BE8 features advanced technology that enhances speed and reduces power consumption, catering to modern electronic needs.
Applications of the 71V416S12BE8 span across industries such as aerospace, consumer electronics, and industrial automation. For instance, it is used in flight control systems for precise data handling and in smart TVs for seamless streaming. The 71V416S12BE8 is a trusted and high-quality Memory IC for a wide range of applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-CABGA (9x9)
Related Products
Infineon Technologies
S29GL01GS12FHIV10
Infineon Technologies
CY15B104QSN-108SXIT
STMicroelectronics
M24M01-RMN6P
Infineon Technologies
CY62147GE30-45BVXIT
Infineon Technologies
S29GL128S11DHIV10
Renesas Electronics America Inc
70V3599S133BC
Macronix
MX25U3232FZBI02
National Semiconductor
93Z451FMQB
Micron Technology Inc.
MT29F8G08ABACAWP-IT:C TR
Infineon Technologies