A2G22S190-01SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$154.53
Available to order
Reference Price (USD)
1+
$154.53376
500+
$152.9884224
1000+
$151.4430848
1500+
$149.8977472
2000+
$148.3524096
2500+
$146.807072
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the A2G22S190-01SR3 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The A2G22S190-01SR3's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the A2G22S190-01SR3 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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