A2G26H281-04SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$199.62
Available to order
Reference Price (USD)
250+
$148.70332
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Designed for superior RF performance, the A2G26H281-04SR3 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The A2G26H281-04SR3 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the A2G26H281-04SR3 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 2.496GHz ~ 2.69GHz
- Gain: 14.2dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 50W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
Related Products
Wolfspeed, Inc.
PTVA104501EH-V1-R0
STMicroelectronics
STAC2942BW
NXP USA Inc.
BLF6G27LS-75,112
Ampleon USA Inc.
BLA9G1011L-300GU
Ampleon USA Inc.
BLF6G38-10G,118
NXP USA Inc.
BF1202R,215
Ampleon USA Inc.
BLF8G20LS-220J
NXP USA Inc.
BF904AWR,115
Wolfspeed, Inc.
PTMA180402M-V1-R500
Wolfspeed, Inc.