A2G35S160-01SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$174.99
Available to order
Reference Price (USD)
250+
$116.37008
Exquisite packaging
Discount
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Designed for superior RF performance, the A2G35S160-01SR3 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The A2G35S160-01SR3 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the A2G35S160-01SR3 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 3.4GHz ~ 3.6GHz
- Gain: 15.7dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 190 mA
- Power - Output: 51dBm
- Voltage - Rated: 125 V
- Package / Case: NI-400S-2S
- Supplier Device Package: NI-400S-2S
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