A2T18S262W12NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$117.62
Available to order
Reference Price (USD)
250+
$67.67544
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the A2T18S262W12NR3 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The A2T18S262W12NR3's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the A2T18S262W12NR3 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 19.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 231W
- Voltage - Rated: 65 V
- Package / Case: OM-880X-2L2L
- Supplier Device Package: OM-880X-2L2L
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