A3G26D055N-2515
NXP USA Inc.
NXP USA Inc.
RF REFERENCE CIRCUIT 55W 2515MHZ
$282.62
Available to order
Reference Price (USD)
1+
$282.62000
500+
$279.7938
1000+
$276.9676
1500+
$274.1414
2000+
$271.3152
2500+
$268.489
Exquisite packaging
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Discover the A3G26D055N-2515, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The A3G26D055N-2515 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the A3G26D055N-2515 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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