A3G26H200W17SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR,
$137.43
Available to order
Reference Price (USD)
1+
$137.42660
500+
$136.052334
1000+
$134.678068
1500+
$133.303802
2000+
$131.929536
2500+
$130.55527
Exquisite packaging
Discount
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The A3G26H200W17SR3 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The A3G26H200W17SR3's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s A3G26H200W17SR3 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: 2.496GHz ~ 2.69GHz
- Gain: 14.2dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 120 mA
- Power - Output: 34W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4S2S
- Supplier Device Package: NI-780S-4S2S
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