A3G35H100-04SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$177.48
Available to order
Reference Price (USD)
1+
$177.48252
500+
$175.7076948
1000+
$173.9328696
1500+
$172.1580444
2000+
$170.3832192
2500+
$168.608394
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the A3G35H100-04SR3 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The A3G35H100-04SR3's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the A3G35H100-04SR3 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
VEC2303-TL-E
onsemi
ECH8602R-TL-H
Freescale Semiconductor
MRFE6S9046NR1
Wolfspeed, Inc.
CGHV14500P
NXP USA Inc.
A2T14H450-23NR6
onsemi
ECH8601R-TL-EX
Microchip Technology
VRF157FLMP
Freescale Semiconductor
MRF6V4300NBR5
Wolfspeed, Inc.
PTVA101K02EV-V1-R250
Freescale Semiconductor