A3I25D080NR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS INTEGRATED POWE
$39.34
Available to order
Reference Price (USD)
1+
$39.34000
500+
$38.9466
1000+
$38.5532
1500+
$38.1598
2000+
$37.7664
2500+
$37.373
Exquisite packaging
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Discover the A3I25D080NR1, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The A3I25D080NR1 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the A3I25D080NR1 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 29.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 175 mA
- Power - Output: 8.3W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Flat Leads
- Supplier Device Package: TO-270WB-17
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