A5G35S008NT6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$17.45
Available to order
Reference Price (USD)
1+
$17.44600
500+
$17.27154
1000+
$17.09708
1500+
$16.92262
2000+
$16.74816
2500+
$16.5737
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Designed for superior RF performance, the A5G35S008NT6 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The A5G35S008NT6 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the A5G35S008NT6 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Freescale Semiconductor
MRF6V14300HSR5
NXP USA Inc.
A2V09H400-04SR3
onsemi
2SK3815-E
Ampleon USA Inc.
BLM9D3336-14AMZ
onsemi
FTD2019S-TL-E
Rochester Electronics, LLC
TM-10
NXP USA Inc.
MRF24301HS-2450
Freescale Semiconductor
MRF5S21045NBR1
Freescale Semiconductor
AFT26H050W26SR3
NXP Semiconductors