ADC114EUQ-7
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
$0.07
Available to order
Reference Price (USD)
3,000+
$0.07034
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ADC114EUQ-7 by Diodes Incorporated is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Diodes Incorporated's state-of-the-art production facilities ensure that the ADC114EUQ-7 delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 270mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Rohm Semiconductor
EMD9T2R
Nexperia USA Inc.
PEMD2,115
Nexperia USA Inc.
PIMC31F
Rohm Semiconductor
FMA9AT148
Rohm Semiconductor
IMB3AT110
Nexperia USA Inc.
PBLS6021D,115
Toshiba Semiconductor and Storage
RN4907FE,LXHF(CT
Toshiba Semiconductor and Storage
RN1911,LXHF(CT
Toshiba Semiconductor and Storage
RN1968(TE85L,F)
Panasonic Electronic Components