ADP3118JRZ-RL
Analog Devices Inc.
Analog Devices Inc.
DUAL BOOTSTRAPPED 12 VOLT MOSFET
$0.80
Available to order
Reference Price (USD)
2,500+
$0.67500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Analog Devices Inc. presents the ADP3118JRZ-RL as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.15V ~ 13.2V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 25 V
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: 0°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Microchip Technology
MIC4129YML-TR
onsemi
FAN3122CMX
onsemi
NCP5355DG
Microchip Technology
TC4424EOE713
Texas Instruments
UCC27282DRCR
onsemi
FAN73932MX
Melexis Technologies NV
MLX83203KLW-DBA-000-SP
Analog Devices Inc.
LTC1693-3CMS8#TRPBF
Infineon Technologies
IR21084PBF
onsemi