AFT18H357-24SR6
NXP USA Inc.
NXP USA Inc.
RF MOSFET LDMOS DL 28V NI1230-4
$75.96
Available to order
Reference Price (USD)
150+
$156.33327
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the AFT18H357-24SR6 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The AFT18H357-24SR6's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the AFT18H357-24SR6 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.81GHz
- Gain: 17.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
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