AFT21H350W03SR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.11GHZ NI1230S
$191.21
Available to order
Reference Price (USD)
150+
$162.80793
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the AFT21H350W03SR6 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The AFT21H350W03SR6's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s AFT21H350W03SR6 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz
- Gain: 16.4dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
Related Products
Wolfspeed, Inc.
CGHV1F025S
Ampleon USA Inc.
BLA6H1011-600,112
Wolfspeed, Inc.
PTRA087008NB-V1-R2
NXP USA Inc.
MMRF1305HSR5
Integra Technologies Inc.
IGN2729M400R2
MACOM Technology Solutions
MRF151A
Ampleon USA Inc.
BLF574,112
Ampleon USA Inc.
BLU6H0410L-600P,11
Ampleon USA Inc.
BLF8G10LS-270GV,12
Microchip Technology