AFT27S010NT1
NXP USA Inc.
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
$15.60
Available to order
Reference Price (USD)
1,000+
$9.88669
Exquisite packaging
Discount
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Discover the AFT27S010NT1, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The AFT27S010NT1 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the AFT27S010NT1 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 21.7dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 90 mA
- Power - Output: 1.26W
- Voltage - Rated: 65 V
- Package / Case: PLD-1.5W
- Supplier Device Package: PLD-1.5W
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