AFT27S012NT1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$23.65
Available to order
Reference Price (USD)
1,000+
$10.39714
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The AFT27S012NT1 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The AFT27S012NT1's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the AFT27S012NT1 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 728MHz ~ 2.7GHz
- Gain: 20.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 90 mA
- Power - Output: 13W
- Voltage - Rated: 65 V
- Package / Case: PLD-1.5W
- Supplier Device Package: PLD-1.5W
Related Products
NXP USA Inc.
MMRF1023HSR5
Ampleon USA Inc.
BLC10G19XS-600AVTZ
NXP USA Inc.
BLF6G10LS-135R,112
Microchip Technology
ARF460BG
NXP USA Inc.
MMRF1008HR5
onsemi
3LN01SP-AC
Wolfspeed, Inc.
CGHV14800F
STMicroelectronics
PD55025-E
NXP USA Inc.
BF1102,115
NXP USA Inc.