AIKW50N65DH5XKSA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 650V TO247-3
$9.66
Available to order
Reference Price (USD)
1+
$8.63000
10+
$7.85200
240+
$6.60525
720+
$5.83053
Exquisite packaging
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Discover the AIKW50N65DH5XKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the AIKW50N65DH5XKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the AIKW50N65DH5XKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 490µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 1018 nC
- Td (on/off) @ 25°C: 21ns/156ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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