Shopping cart

Subtotal: $0.00

AOI7S65

Alpha & Omega Semiconductor Inc.
AOI7S65 Preview
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 7A TO251A
$0.83
Available to order
Reference Price (USD)
3,500+
$0.75900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251A
  • Package / Case: TO-251-3 Stub Leads, IPak

Related Products

Microchip Technology

APT8020JLL

PN Junction Semiconductor

P3M171K0F3

Fairchild Semiconductor

HUF75631P3

Diodes Incorporated

BSS138-7-F

Infineon Technologies

SPI15N65C3

Renesas Electronics America Inc

RJK0213DPA-00#J53

Infineon Technologies

IPN80R3K3P7ATMA1

Panjit International Inc.

PJQ5445-AU_R2_000A1

Infineon Technologies

IPA60R060P7XKSA1

Top