Shopping cart

Subtotal: $0.00

AOW12N65

Alpha & Omega Semiconductor Inc.
AOW12N65 Preview
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 12A TO262
$1.03
Available to order
Reference Price (USD)
1,000+
$0.91800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

Related Products

Panjit International Inc.

PJD12P06_L2_00001

Infineon Technologies

IPB034N03LGATMA1

Toshiba Semiconductor and Storage

TK40A06N1,S4X

STMicroelectronics

STW40N60M2

Diodes Incorporated

DMP1012UFDF-7

Infineon Technologies

IPD80P03P4L07ATMA1

Microchip Technology

VP2450N8-G

Toshiba Semiconductor and Storage

TK7A90E,S4X

Fairchild Semiconductor

HUFA75329G3

Alpha & Omega Semiconductor Inc.

AOTF16N50

Top