APT13003NZTR-G1
Diodes Incorporated
Diodes Incorporated
TRANS NPN 900V 1.5A TO92
$0.51
Available to order
Reference Price (USD)
2,000+
$0.12331
6,000+
$0.11712
10,000+
$0.10782
50,000+
$0.09440
Exquisite packaging
Discount
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The APT13003NZTR-G1 from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the APT13003NZTR-G1 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of APT13003NZTR-G1 and enhance your electronic projects with this top-quality component from Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Power - Max: 1 W
- Frequency - Transition: 4MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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