APT150GN120J
Microchip Technology
Microchip Technology
IGBT MOD 1200V 215A 625W ISOTOP
$47.46
Available to order
Reference Price (USD)
1+
$40.33000
10+
$37.71000
25+
$34.87600
100+
$32.69610
250+
$30.51636
Exquisite packaging
Discount
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Experience next-generation power control with Microchip Technology's APT150GN120J IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APT150GN120J offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APT150GN120J in your next-generation HVDC systems or particle accelerator power supplies. Microchip Technology delivers reliability where it matters most with the APT150GN120J IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 215 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ISOTOP
- Supplier Device Package: ISOTOP®
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