APTGT25X120T3G
Microchip Technology
Microchip Technology
IGBT MODULE 1200V 40A 156W SP3
$101.04
Available to order
Reference Price (USD)
100+
$54.58080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Microchip Technology's APTGT25X120T3G, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The APTGT25X120T3G performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Microchip Technology's APTGT25X120T3G, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 156 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
Related Products
Infineon Technologies
FF225R17ME4B11BPSA1
IXYS
MIXA150R1200VA
Microchip Technology
APTGT150TA60PG
Infineon Technologies
FF600R12ME4B11BPSA2
onsemi
NXH50M65L4C2ESG
IXYS
MIXG240W1200PTEH
Infineon Technologies
FS100R12W2T7BOMA1
Infineon Technologies
IM241L6T2BAKMA1
Infineon Technologies
DF80R07W1H5FPB50BPSA1
Infineon Technologies