APTM100DSK35T3G
Microchip Technology
Microchip Technology
MOSFET 2N-CH 1000V 22A SP3
$98.23
Available to order
Reference Price (USD)
100+
$58.46230
Exquisite packaging
Discount
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Choose the APTM100DSK35T3G from Microchip Technology for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the APTM100DSK35T3G stands out for its reliability and efficiency. Microchip Technology's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 22A
- Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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