Shopping cart

Subtotal: $0.00

AR3PJHM3_A/H

Vishay General Semiconductor - Diodes Division
AR3PJHM3_A/H Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.8A TO277A
$0.50
Available to order
Reference Price (USD)
3,000+
$0.48900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Infineon Technologies

BAS1602VH6327XTSA1

STMicroelectronics

STTH12R06DIRG

Diotec Semiconductor

BY500-100

Vishay General Semiconductor - Diodes Division

MMBD914-G3-08

Vishay General Semiconductor - Diodes Division

ES2D-M3/52T

Nexperia USA Inc.

BAT54,215

Vishay General Semiconductor - Diodes Division

V10P20-M3/87A

Diodes Incorporated

MURS460C-13-F

Diodes Incorporated

SBR12E45LH1-13

Vishay General Semiconductor - Diodes Division

RGL34KHE3/98

Top