AUIRF1018E
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 79A TO220AB
$1.59
Available to order
Reference Price (USD)
1,000+
$1.26914
Exquisite packaging
Discount
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Enhance your electronic projects with the AUIRF1018E single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's AUIRF1018E for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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