AUIRF9Z34N-INF
Infineon Technologies
Infineon Technologies
AUTOMOTIVE HEXFET P CHANNEL
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
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The AUIRF9Z34N-INF from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the AUIRF9Z34N-INF offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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