BA283-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE STANDARD 35V DO35
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The BA283-TAP RF Diode by Vishay General Semiconductor - Diodes Division is a versatile and efficient solution in the Diodes - RF segment of Discrete Semiconductor Products. With its high breakdown voltage and fast recovery time, it is ideal for RF power amplifiers and mixers. Applications range from consumer electronics to industrial automation, showcasing its adaptability. Trust Vishay General Semiconductor - Diodes Division to provide a diode that combines performance, durability, and cutting-edge technology for all your RF needs.
Specifications
- Product Status: Obsolete
- Diode Type: Standard - Single
- Voltage - Peak Reverse (Max): 35V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 1.2pF @ 3V, 100MHz
- Resistance @ If, F: 900mOhm @ 10mA, 200MHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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