BA479G-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 30V DO35
$0.15
Available to order
Reference Price (USD)
50,000+
$0.14670
Exquisite packaging
Discount
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Experience unparalleled RF performance with the BA479G-TAP RF Diode from Vishay General Semiconductor - Diodes Division, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BA479G-TAP reflects Vishay General Semiconductor - Diodes Division's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 30V
- Current - Max: 50 mA
- Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
- Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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