BA479G-TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 30V DO35
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
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The BA479G-TR RF Diode by Vishay General Semiconductor - Diodes Division is a high-performance component in the Diodes - RF category, designed for precision and efficiency. Part of the Discrete Semiconductor Products family, it features low capacitance and high isolation, perfect for RF switching and detection. Its applications include satellite communication, radar systems, and IoT devices. The BA479G-TR stands out for its reliability and advanced technology, making Vishay General Semiconductor - Diodes Division a preferred choice for RF diode solutions.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 30V
- Current - Max: 50 mA
- Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
- Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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