BA479S-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 30V DO35
$0.16
Available to order
Reference Price (USD)
50,000+
$0.13300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BA479S-TAP RF Diode by Vishay General Semiconductor - Diodes Division is a high-performance component in the Diodes - RF category, designed for precision and efficiency. Part of the Discrete Semiconductor Products family, it features low capacitance and high isolation, perfect for RF switching and detection. Its applications include satellite communication, radar systems, and IoT devices. The BA479S-TAP stands out for its reliability and advanced technology, making Vishay General Semiconductor - Diodes Division a preferred choice for RF diode solutions.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 30V
- Current - Max: 50 mA
- Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
- Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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