BA591115
NXP USA Inc.
NXP USA Inc.
BA591 - MIXER DIODE, VERY HIGH F
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF systems with the BA591115 RF Diode from NXP USA Inc., a key player in the Discrete Semiconductor Products industry. This diode is crafted for high-frequency applications, offering excellent signal integrity and thermal performance. Commonly used in 5G technology, automotive radar, and test equipment, the BA591115 ensures top-tier functionality. NXP USA Inc.'s dedication to quality and innovation shines through in this exceptional Diodes - RF product.
Specifications
- Product Status: Active
- Diode Type: Standard - Single
- Voltage - Peak Reverse (Max): 35V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
- Resistance @ If, F: 500mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 500 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
Related Products
Nexperia USA Inc.
PMBD353,215
MACOM Technology Solutions
MA4P202-276
MACOM Technology Solutions
MSS60-B46-E45
onsemi
1SV267-FRD-TB-E
MACOM Technology Solutions
MA40215-276
MACOM Technology Solutions
MA4P505-36
Rohm Semiconductor
1SS390SMT2R
Skyworks Solutions Inc.
CLA4610-085LF
MACOM Technology Solutions
MA4E932B-186
onsemi