BA779-2-HG3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 30V SOT23-3
$0.00
Available to order
Reference Price (USD)
10,000+
$0.08525
Exquisite packaging
Discount
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The BA779-2-HG3-18 RF Diode by Vishay General Semiconductor - Diodes Division is a high-reliability component in the Diodes - RF classification, part of the broader Discrete Semiconductor Products range. Its excellent thermal management and high-frequency capabilities make it suitable for RF filters, oscillators, and transceivers. Industries such as aerospace, telecommunications, and consumer electronics benefit from its superior performance. Choose Vishay General Semiconductor - Diodes Division's BA779-2-HG3-18 for a diode that delivers precision and durability in every application.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 30V
- Current - Max: 50 mA
- Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
- Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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