BAP55L,315
NXP USA Inc.
NXP USA Inc.
RF DIODE PIN 50V 500MW DFN1006-2
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Optimize your RF circuits with the BAP55L,315 RF Diode from NXP USA Inc., a leading product in the Discrete Semiconductor Products division. This diode offers excellent impedance matching and low insertion loss, crucial for high-frequency operations. Widely used in cellular networks, GPS devices, and RF sensors, the BAP55L,315 is a reliable choice for engineers and designers. NXP USA Inc. ensures that each diode meets rigorous quality standards, making it a trusted component in the Diodes - RF market.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
- Resistance @ If, F: 700mOhm @ 100mA, 100MHz
- Power Dissipation (Max): 500 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: DFN1006-2
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