BAP55LX,315
NXP USA Inc.
NXP USA Inc.
RF DIODE PIN 50V 135MW 2DFN
$0.46
Available to order
Reference Price (USD)
10,000+
$0.10136
30,000+
$0.09297
Exquisite packaging
Discount
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Discover the high-performance BAP55LX,315 RF Diode from NXP USA Inc., designed for precision and reliability in radio frequency applications. As a key component in the Discrete Semiconductor Products category, this diode excels in signal detection, mixing, and switching. Its superior frequency response and low noise characteristics make it ideal for demanding RF circuits. Commonly used in communication systems, radar, and wireless devices, the BAP55LX,315 ensures optimal performance in applications such as mobile base stations and satellite receivers. Trust NXP USA Inc.'s expertise for cutting-edge RF diode solutions.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
- Resistance @ If, F: 800mOhm @ 100mA, 100MHz
- Power Dissipation (Max): 135 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: 2-XDFN
- Supplier Device Package: DFN1006D-2
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