BAP70AM,135
NXP USA Inc.
NXP USA Inc.
RF DIODE PIN 50V 300MW 6TSSOP
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The BAP70AM,135 RF Diode by NXP USA Inc. is a versatile and efficient solution in the Diodes - RF segment of Discrete Semiconductor Products. With its high breakdown voltage and fast recovery time, it is ideal for RF power amplifiers and mixers. Applications range from consumer electronics to industrial automation, showcasing its adaptability. Trust NXP USA Inc. to provide a diode that combines performance, durability, and cutting-edge technology for all your RF needs.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - 2 Pair Series
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.25pF @ 20V, 1MHz
- Resistance @ If, F: 1.9Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 300 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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