BAR 65-02L E6327
Infineon Technologies
Infineon Technologies
RF DIODE PIN 30V 250MW TSLP-2
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The BAR 65-02L E6327 RF Diode by Infineon Technologies is a versatile and efficient solution in the Diodes - RF segment of Discrete Semiconductor Products. With its high breakdown voltage and fast recovery time, it is ideal for RF power amplifiers and mixers. Applications range from consumer electronics to industrial automation, showcasing its adaptability. Trust Infineon Technologies to provide a diode that combines performance, durability, and cutting-edge technology for all your RF needs.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 30V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
- Resistance @ If, F: 900mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2-1
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