BAR 90-081LS E6327
Infineon Technologies

Infineon Technologies
RF DIODE PIN 80V 150MW TSSLP-8-1
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Enhance your RF applications with the BAR 90-081LS E6327 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products range. This diode is engineered for superior thermal stability and low forward voltage drop, making it a versatile solution for various RF needs. Its applications span across TV tuners, RFID systems, and microwave communications. The BAR 90-081LS E6327 is a testament to Infineon Technologies's commitment to innovation and quality in the Diodes - RF sector. Invest in a diode that guarantees performance and longevity.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - 4 Independent
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 8-XFDFN
- Supplier Device Package: TSSLP-8-1