BAR161E6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 100V 250MW SOT23-3
$0.16
Available to order
Reference Price (USD)
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$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
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Experience unparalleled RF performance with the BAR161E6327HTSA1 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BAR161E6327HTSA1 reflects Infineon Technologies's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - 1 Pair Common Anode
- Voltage - Peak Reverse (Max): 100V
- Current - Max: 140 mA
- Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
- Resistance @ If, F: 12Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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