BAR6402ELE6327XTMA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 150V 250MW TSLP2-19
$0.47
Available to order
Reference Price (USD)
15,000+
$0.04864
30,000+
$0.04560
75,000+
$0.04043
105,000+
$0.03891
Exquisite packaging
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Discover the high-performance BAR6402ELE6327XTMA1 RF Diode from Infineon Technologies, designed for precision and reliability in radio frequency applications. As a key component in the Discrete Semiconductor Products category, this diode excels in signal detection, mixing, and switching. Its superior frequency response and low noise characteristics make it ideal for demanding RF circuits. Commonly used in communication systems, radar, and wireless devices, the BAR6402ELE6327XTMA1 ensures optimal performance in applications such as mobile base stations and satellite receivers. Trust Infineon Technologies's expertise for cutting-edge RF diode solutions.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
- Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: PG-TSLP-2-19
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