BAR6403WE6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 150V 250MW SOD323-2
$0.47
Available to order
Reference Price (USD)
3,000+
$0.09512
6,000+
$0.09034
15,000+
$0.08317
30,000+
$0.07839
75,000+
$0.07122
150,000+
$0.06883
Exquisite packaging
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Discover the high-performance BAR6403WE6327HTSA1 RF Diode from Infineon Technologies, designed for precision and reliability in radio frequency applications. As a key component in the Discrete Semiconductor Products category, this diode excels in signal detection, mixing, and switching. Its superior frequency response and low noise characteristics make it ideal for demanding RF circuits. Commonly used in communication systems, radar, and wireless devices, the BAR6403WE6327HTSA1 ensures optimal performance in applications such as mobile base stations and satellite receivers. Trust Infineon Technologies's expertise for cutting-edge RF diode solutions.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
- Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
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