BAR6405E6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 150V 250MW SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.05290
6,000+
$0.04600
15,000+
$0.03910
30,000+
$0.03680
75,000+
$0.03450
150,000+
$0.02990
Exquisite packaging
Discount
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Optimize your RF circuits with the BAR6405E6327HTSA1 RF Diode from Infineon Technologies, a leading product in the Discrete Semiconductor Products division. This diode offers excellent impedance matching and low insertion loss, crucial for high-frequency operations. Widely used in cellular networks, GPS devices, and RF sensors, the BAR6405E6327HTSA1 is a reliable choice for engineers and designers. Infineon Technologies ensures that each diode meets rigorous quality standards, making it a trusted component in the Diodes - RF market.
Specifications
- Product Status: Active
- Diode Type: PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
- Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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