BAR6406E6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 150V 250MW SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.05727
6,000+
$0.05037
15,000+
$0.04347
30,000+
$0.04117
75,000+
$0.03887
150,000+
$0.03427
Exquisite packaging
Discount
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Upgrade your RF systems with the BAR6406E6327HTSA1 RF Diode from Infineon Technologies, a key player in the Discrete Semiconductor Products industry. This diode is crafted for high-frequency applications, offering excellent signal integrity and thermal performance. Commonly used in 5G technology, automotive radar, and test equipment, the BAR6406E6327HTSA1 ensures top-tier functionality. Infineon Technologies's dedication to quality and innovation shines through in this exceptional Diodes - RF product.
Specifications
- Product Status: Active
- Diode Type: PIN - 1 Pair Common Anode
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
- Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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