BAR8802VH6327XTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 80V 250MW SC79-2
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09234
6,000+
$0.08770
15,000+
$0.08074
30,000+
$0.07610
75,000+
$0.06914
150,000+
$0.06682
Exquisite packaging
Discount
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The BAR8802VH6327XTSA1 RF Diode by Infineon Technologies is a premium component in the Diodes - RF category, known for its high-speed performance and reliability. As part of the Discrete Semiconductor Products lineup, it is designed to handle high-frequency signals with precision. Ideal for use in wireless communication, broadcasting, and military systems, this diode ensures minimal distortion and maximum efficiency. With Infineon Technologies's BAR8802VH6327XTSA1, you get a product that excels in critical RF applications, providing unmatched durability and performance.
Specifications
- Product Status: Not For New Designs
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
- Resistance @ If, F: 600mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
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