BAR9002ELE6327XTMA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 80V 250MW TSLP-2-19
$0.48
Available to order
Reference Price (USD)
15,000+
$0.04267
30,000+
$0.04016
75,000+
$0.03765
105,000+
$0.03263
Exquisite packaging
Discount
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Experience unparalleled RF performance with the BAR9002ELE6327XTMA1 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BAR9002ELE6327XTMA1 reflects Infineon Technologies's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: PG-TSLP-2-19
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