BAR9002ELSE6327XTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 80V 250MW TSSLP-2
$0.43
Available to order
Reference Price (USD)
15,000+
$0.08959
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BAR9002ELSE6327XTSA1 RF Diode by Infineon Technologies is a versatile and efficient solution in the Diodes - RF segment of Discrete Semiconductor Products. With its high breakdown voltage and fast recovery time, it is ideal for RF power amplifiers and mixers. Applications range from consumer electronics to industrial automation, showcasing its adaptability. Trust Infineon Technologies to provide a diode that combines performance, durability, and cutting-edge technology for all your RF needs.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: PG-TSSLP-2-3
Related Products
MACOM Technology Solutions
MADP-007438-0287BT
NXP USA Inc.
BAP64-05W,135
Skyworks Solutions Inc.
SMP1304-079LF
Infineon Technologies
BAR141E6327HTSA1
NTE Electronics, Inc
NTE174
Skyworks Solutions Inc.
CLA4603-000
MACOM Technology Solutions
MA4L011-186
MACOM Technology Solutions
MSS20-143-B10D
Skyworks Solutions Inc.
SMP1307-011LF
Solid State Inc.